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  Datasheet File OCR Text:
 CORPORATION
GL156
Description Features & Volt VCEO 60
& 3 Amp & Low
ISSUED DATE :2004/12/29 REVISED DATE :2005/08/02B
NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR The GL156 is designed for general purpose switching and amplifier applications.
Package Dimensions
continuous current saturation voltage
SOT-223
REF. A C D E I H
Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 C 0C 0.60 0.80 0.25 0.35
REF. B J 1 2 3 4 5
Millimeter Min. Max. C 13 T YP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80
Absolute Maximum Ratings at Ta = 25 :
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Symbol BVCBO *BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 fT ton toff Cob Min. 80 60 5 70 100 80 40 140 Typ. 0.12 0.43 0.9 0.8 200 200 170 80 175 45 800 Symbol Tj Tstg VCBO VCEO VEBO IC IC PD Ratings +150 -55~+150 80 60 5 3 6 2 Unit
V V V A A W
Electrical Characteristics(Ta = 25 :
,unless otherwise noted) Max. Unit Test Conditions V IC=100uA, IE=0 V IC=10mA, IB=0 V IE=100uA, IC=0 100 nA VCB=60V, IE=0 100 nA VEB=4V, IC=0 0.3 V IC=1A, IB=0.1A 0.6 V IC=3A, IB=0.3A 1.25 V IC=1A, IB=0.1A 1.0 V IC=1A, VCE=2V VCE=2V, IC=50mA 300 VCE=2V, IC=500mA VCE=2V, IC=1A VCE=2V, IC=2A MHz VCE=5V, IC=100mA, f=100MHz ns VCC=10V, IC=500mA, IB1=IB2=50mA 30 pF VCB=10V, f=1MHz
2%
*Measured under pulse condition. Pulse width 300 s, Duty Cycle Spice parameter data is available upon request for this device.
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CORPORATION
Characteristics Curve
ISSUED DATE :2004/12/29 REVISED DATE :2005/08/02B
Collector Current (A)
Collector Current (A)
Collector Current (A)
Collector Current (A)
Collector Emitter Voltage (V)
Collector Current (A)
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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